BCW68GE6327HTSA1
Infineon Technologies
Infineon Technologies
TRANS PNP 45V 0.8A SOT23
$0.07
Available to order
Reference Price (USD)
42,000+
$0.03444
Exquisite packaging
Discount
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Discover high-quality BCW68GE6327HTSA1 from Infineon Technologies, a leading solution in the Discrete Semiconductor Products category. Our Transistors - Bipolar (BJT) - Single are designed for reliability and performance, making them ideal for various electronic applications. These transistors feature excellent amplification and switching capabilities, ensuring optimal performance in your circuits. Perfect for use in amplifiers, switches, and other electronic devices, BCW68GE6327HTSA1 delivers consistent results. Interested in learning more? Contact us today for a quote and let Infineon Technologies meet your semiconductor needs.
Specifications
- Product Status: Not For New Designs
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 800 mA
- Voltage - Collector Emitter Breakdown (Max): 45 V
- Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
- Current - Collector Cutoff (Max): 20nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
- Power - Max: 330 mW
- Frequency - Transition: 200MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: PG-SOT23
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