BDP949H6327XTSA1
Infineon Technologies
Infineon Technologies
TRANS NPN 60V 3A SOT223-4
$0.53
Available to order
Reference Price (USD)
1+
$0.52920
500+
$0.523908
1000+
$0.518616
1500+
$0.513324
2000+
$0.508032
2500+
$0.50274
Exquisite packaging
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Choose BDP949H6327XTSA1 by Infineon Technologies for exceptional quality in Discrete Semiconductor Products. These Transistors - Bipolar (BJT) - Single are designed for high performance, featuring excellent current handling and stability. Ideal for use in power management and signal amplification, BDP949H6327XTSA1 is a versatile solution. Ready to order? Submit your inquiry today and let Infineon Technologies provide the components you need.
Specifications
- Product Status: Not For New Designs
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 3 A
- Voltage - Collector Emitter Breakdown (Max): 60 V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 1V
- Power - Max: 5 W
- Frequency - Transition: 100MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-261-4, TO-261AA
- Supplier Device Package: PG-SOT223-4-10
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