BDP950H6327XTSA1
Infineon Technologies

Infineon Technologies
TRANS PNP 60V 3A SOT223-4
$0.53
Available to order
Reference Price (USD)
1+
$0.52920
500+
$0.523908
1000+
$0.518616
1500+
$0.513324
2000+
$0.508032
2500+
$0.50274
Exquisite packaging
Discount
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Upgrade your electronic projects with BDP950H6327XTSA1 by Infineon Technologies, a top choice in Discrete Semiconductor Products. These Transistors - Bipolar (BJT) - Single offer superior performance with features like low noise and high gain, making them suitable for a wide range of applications. Whether you're working on consumer electronics or industrial systems, BDP950H6327XTSA1 provides the reliability you need. Ready to enhance your designs? Submit an inquiry now and experience the Infineon Technologies difference.
Specifications
- Product Status: Not For New Designs
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 3 A
- Voltage - Collector Emitter Breakdown (Max): 60 V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 500mA, 1V
- Power - Max: 5 W
- Frequency - Transition: 100MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-261-4, TO-261AA
- Supplier Device Package: PG-SOT223-4-10