BDP953H6327XTSA1
Infineon Technologies
Infineon Technologies
TRANS NPN 100V 3A SOT223-4
$0.53
Available to order
Reference Price (USD)
1+
$0.52920
500+
$0.523908
1000+
$0.518616
1500+
$0.513324
2000+
$0.508032
2500+
$0.50274
Exquisite packaging
Discount
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Trust BDP953H6327XTSA1 by Infineon Technologies for all your transistor needs in the Discrete Semiconductor Products category. These Transistors - Bipolar (BJT) - Single are built to last, with features like high breakdown voltage and excellent thermal performance. Perfect for automotive, industrial, and consumer electronics, BDP953H6327XTSA1 ensures reliability. Get in touch today to request a quote and see why Infineon Technologies is a trusted name in the industry.
Specifications
- Product Status: Not For New Designs
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 3 A
- Voltage - Collector Emitter Breakdown (Max): 100 V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 1V
- Power - Max: 5 W
- Frequency - Transition: 100MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-261-4, TO-261AA
- Supplier Device Package: PG-SOT223-4-10
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