BDV65
NTE Electronics, Inc

NTE Electronics, Inc
TRANS NPN 60V 12A TO218
$2.76
Available to order
Reference Price (USD)
1+
$2.76000
500+
$2.7324
1000+
$2.7048
1500+
$2.6772
2000+
$2.6496
2500+
$2.622
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your designs with BDV65 by NTE Electronics, Inc, a leader in Discrete Semiconductor Products. These Transistors - Bipolar (BJT) - Single are designed for precision and reliability, offering excellent linearity and low distortion. Whether for RF applications or general-purpose switching, BDV65 is the perfect fit. Contact us today to learn more and place your order with NTE Electronics, Inc.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 12 A
- Voltage - Collector Emitter Breakdown (Max): 60 V
- Vce Saturation (Max) @ Ib, Ic: -
- Current - Collector Cutoff (Max): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 5A, 4V
- Power - Max: 125 W
- Frequency - Transition: 60MHz
- Operating Temperature: -
- Mounting Type: Through Hole
- Package / Case: TO-218-3
- Supplier Device Package: TO-218