BFG10W/X,115
NXP USA Inc.
NXP USA Inc.
RF TRANS NPN 10V 1.9GHZ 4SO
$0.52
Available to order
Reference Price (USD)
1+
$0.52000
500+
$0.5148
1000+
$0.5096
1500+
$0.5044
2000+
$0.4992
2500+
$0.494
Exquisite packaging
Discount
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Maximize signal clarity with BFG10W/X,115 RF BJT transistors by NXP USA Inc.. Featuring low distortion and high linearity, these components are perfect for high-sensitivity applications like medical imaging equipment and military communications. Their compact design allows for easy integration without compromising performance. Don t miss out inquire now for bulk discounts and technical specifications!
Specifications
- Product Status: Obsolete
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 10V
- Frequency - Transition: 1.9GHz
- Noise Figure (dB Typ @ f): -
- Gain: -
- Power - Max: 400mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 50mA, 5V
- Current - Collector (Ic) (Max): 250mA
- Operating Temperature: 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-343 Reverse Pinning
- Supplier Device Package: 4-SO
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