BFG135AE6327XT
Infineon Technologies
Infineon Technologies
RF TRANS NPN 15V 6GHZ SOT223-4
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Discover high-performance BFG135AE6327XT RF Bipolar Transistors from Infineon Technologies, designed for superior signal amplification in demanding applications. These transistors feature excellent high-frequency response, low noise, and reliable performance, making them ideal for RF and microwave circuits. Commonly used in communication systems, radar, and wireless devices, our BJT-RF transistors ensure stable operation under varying conditions. Contact us today for pricing and availability let our experts help you find the perfect solution for your RF needs!
Specifications
- Product Status: Discontinued at Digi-Key
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 15V
- Frequency - Transition: 6GHz
- Noise Figure (dB Typ @ f): 1.5dB ~ 2.6dB @ 900MHz ~ 1.8GHz
- Gain: 9dB ~ 14dB
- Power - Max: 1W
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 100mA, 8V
- Current - Collector (Ic) (Max): 150mA
- Operating Temperature: -
- Mounting Type: Surface Mount
- Package / Case: TO-261-4, TO-261AA
- Supplier Device Package: PG-SOT223-4
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