BFG35,115
NXP USA Inc.

NXP USA Inc.
RF TRANS NPN 18V 4GHZ SOT223
$0.00
Available to order
Reference Price (USD)
1,000+
$0.54450
2,000+
$0.50820
5,000+
$0.48279
Exquisite packaging
Discount
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Achieve peak RF performance with BFG35,115 transistors by NXP USA Inc.. These BJT components combine high breakdown voltage with superior thermal management, catering to power amplifier stages and frequency multipliers. Trusted in defense and commercial sectors alike. Take the next step inquire about customization options and lead times!
Specifications
- Product Status: Obsolete
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 18V
- Frequency - Transition: 4GHz
- Noise Figure (dB Typ @ f): -
- Gain: -
- Power - Max: 1W
- DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 100mA, 10V
- Current - Collector (Ic) (Max): 150mA
- Operating Temperature: 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-261-4, TO-261AA
- Supplier Device Package: SC-73