BFG520W,115
NXP USA Inc.
NXP USA Inc.
RF TRANS NPN 15V 9GHZ 4SO
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Engineered for excellence, NXP USA Inc.'s BFG520W,115 transistors redefine RF performance in the Bipolar (BJT) category. Ideal for VHF/UHF systems, these devices provide exceptional gain-bandwidth product and phase stability. Applications span from broadcast transmitters to automotive radar. Partner with us for quality components contact our sales team for personalized assistance!
Specifications
- Product Status: Obsolete
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 15V
- Frequency - Transition: 9GHz
- Noise Figure (dB Typ @ f): 1.1dB ~ 2.1dB @ 900MHz
- Gain: -
- Power - Max: 500mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 20mA, 6V
- Current - Collector (Ic) (Max): 70mA
- Operating Temperature: 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-343 Reverse Pinning
- Supplier Device Package: 4-SO
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NXP USA Inc.