BFP196WE6327
Infineon Technologies
Infineon Technologies
RF TRANSISTOR, L BAND, NPN
$0.13
Available to order
Reference Price (USD)
1+
$0.13000
500+
$0.1287
1000+
$0.1274
1500+
$0.1261
2000+
$0.1248
2500+
$0.1235
Exquisite packaging
Discount
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Achieve peak RF performance with BFP196WE6327 transistors by Infineon Technologies. These BJT components combine high breakdown voltage with superior thermal management, catering to power amplifier stages and frequency multipliers. Trusted in defense and commercial sectors alike. Take the next step inquire about customization options and lead times!
Specifications
- Product Status: Active
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 12V
- Frequency - Transition: 7.5GHz
- Noise Figure (dB Typ @ f): 1.3dB ~ 2.3dB @ 900MHz ~ 1.8GHz
- Gain: 12.5dB ~ 19dB
- Power - Max: 700mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 8V
- Current - Collector (Ic) (Max): 150mA
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-82A, SOT-343
- Supplier Device Package: PG-SOT343-4
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Infineon Technologies