BFP450E6327
Infineon Technologies
Infineon Technologies
RF TRANSISTOR, L BAND, NPN
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Achieve peak RF performance with BFP450E6327 transistors by Infineon Technologies. These BJT components combine high breakdown voltage with superior thermal management, catering to power amplifier stages and frequency multipliers. Trusted in defense and commercial sectors alike. Take the next step inquire about customization options and lead times!
Specifications
- Product Status: Active
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 5V
- Frequency - Transition: 24GHz
- Noise Figure (dB Typ @ f): 1.25dB @ 1.8GHz
- Gain: 15.5dB
- Power - Max: 450mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 50mA, 4V
- Current - Collector (Ic) (Max): 100mA
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-82A, SOT-343
- Supplier Device Package: PG-SOT343-4
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