BFP620E7764
Infineon Technologies
Infineon Technologies
RF BIPOLAR TRANSISTOR
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Engineered for excellence, Infineon Technologies's BFP620E7764 transistors redefine RF performance in the Bipolar (BJT) category. Ideal for VHF/UHF systems, these devices provide exceptional gain-bandwidth product and phase stability. Applications span from broadcast transmitters to automotive radar. Partner with us for quality components contact our sales team for personalized assistance!
Specifications
- Product Status: Active
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 2.8V
- Frequency - Transition: 65GHz
- Noise Figure (dB Typ @ f): 0.7dB ~ 1.3dB @ 1.8GHz ~ 6GHz
- Gain: 21.5dB
- Power - Max: 185mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 50mA, 1.5V
- Current - Collector (Ic) (Max): 80mA
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-82A, SOT-343
- Supplier Device Package: PG-SOT343-4
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