BFP740E6327
Infineon Technologies
Infineon Technologies
RF TRANSISTOR, X BAND, NPN
$0.31
Available to order
Reference Price (USD)
1+
$0.31000
500+
$0.3069
1000+
$0.3038
1500+
$0.3007
2000+
$0.2976
2500+
$0.2945
Exquisite packaging
Discount
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Discover high-performance BFP740E6327 RF Bipolar Transistors from Infineon Technologies, designed for superior signal amplification in demanding applications. These transistors feature excellent high-frequency response, low noise, and reliable performance, making them ideal for RF and microwave circuits. Commonly used in communication systems, radar, and wireless devices, our BJT-RF transistors ensure stable operation under varying conditions. Contact us today for pricing and availability let our experts help you find the perfect solution for your RF needs!
Specifications
- Product Status: Active
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 4.7V
- Frequency - Transition: 42GHz
- Noise Figure (dB Typ @ f): 0.5dB ~ 0.85dB @ 1.8GHz ~ 6GHz
- Gain: 27dB
- Power - Max: 160mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 25mA, 3V
- Current - Collector (Ic) (Max): 30mA
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-82A, SOT-343
- Supplier Device Package: PG-SOT343-4
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