BFR380FE6327
Infineon Technologies
Infineon Technologies
RF BIPOLAR TRANSISTOR
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Engineered for excellence, Infineon Technologies's BFR380FE6327 transistors redefine RF performance in the Bipolar (BJT) category. Ideal for VHF/UHF systems, these devices provide exceptional gain-bandwidth product and phase stability. Applications span from broadcast transmitters to automotive radar. Partner with us for quality components contact our sales team for personalized assistance!
Specifications
- Product Status: Active
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 9V
- Frequency - Transition: 14GHz
- Noise Figure (dB Typ @ f): 1.1dB ~ 1.6dB @ 1.8GHz ~ 3GHz
- Gain: 9.5dB ~ 13.5dB
- Power - Max: 380mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 40mA, 3V
- Current - Collector (Ic) (Max): 80mA
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-723
- Supplier Device Package: PG-TSFP-3
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