BFS17HTA
Diodes Incorporated
Diodes Incorporated
RF TRANS NPN 15V 1.3GHZ SOT23-3
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Designed for the future, Diodes Incorporated's BFS17HTA RF BJT transistors deliver cutting-edge technology in a proven package. Features include gold metallization for reliable contacts and TO-39 enclosures for durability. Perfect for phased-array antennas and microwave links. Your innovation starts here reach out for expert consultation today!
Specifications
- Product Status: Obsolete
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 15V
- Frequency - Transition: 1.3GHz
- Noise Figure (dB Typ @ f): 4.5dB @ 500MHz
- Gain: -
- Power - Max: 330mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2mA, 1V
- Current - Collector (Ic) (Max): 25mA
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23-3
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Diodes Incorporated