BFU630F,115
NXP USA Inc.
NXP USA Inc.
RF TRANS NPN 5.5V 21GHZ 4DFP
$0.73
Available to order
Reference Price (USD)
3,000+
$0.20946
6,000+
$0.19595
15,000+
$0.18243
30,000+
$0.18018
Exquisite packaging
Discount
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Upgrade your RF designs with NXP USA Inc.'s BFU630F,115 Bipolar Junction Transistors (BJT), engineered for precision and efficiency in high-frequency applications. Key features include high gain, fast switching, and thermal stability, suitable for amplifiers, oscillators, and RF modules. Whether for industrial or consumer electronics, these transistors deliver consistent performance. Interested? Submit an inquiry now to learn how BFU630F,115 can enhance your projects!
Specifications
- Product Status: Active
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 5.5V
- Frequency - Transition: 21GHz
- Noise Figure (dB Typ @ f): 0.75dB ~ 1.3dB @ 1.5GHz ~ 5.8GHz
- Gain: 13dB ~ 22.5dB
- Power - Max: 200mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 5mA, 2V
- Current - Collector (Ic) (Max): 30mA
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-343F
- Supplier Device Package: 4-DFP
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