BFY193PZZZA1
Infineon Technologies
Infineon Technologies
RF TRANS NPN 12V 7.5GHZ MICRO X1
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Discover high-performance BFY193PZZZA1 RF Bipolar Transistors from Infineon Technologies, designed for superior signal amplification in demanding applications. These transistors feature excellent high-frequency response, low noise, and reliable performance, making them ideal for RF and microwave circuits. Commonly used in communication systems, radar, and wireless devices, our BJT-RF transistors ensure stable operation under varying conditions. Contact us today for pricing and availability let our experts help you find the perfect solution for your RF needs!
Specifications
- Product Status: Obsolete
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 12V
- Frequency - Transition: 7.5GHz
- Noise Figure (dB Typ @ f): 2.3dB ~ 2.9dB @ 2GHz
- Gain: 12.5dB ~ 13.5dB
- Power - Max: 580mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 30mA, 8V
- Current - Collector (Ic) (Max): 80mA
- Operating Temperature: 200°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: MICRO-X1
- Supplier Device Package: MICRO-X1
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