BLA6G1011L-200RG112
NXP USA Inc.
NXP USA Inc.
POWER LDMOS TRANSISTOR, SOT502 (
$547.28
Available to order
Reference Price (USD)
1+
$547.28000
500+
$541.8072
1000+
$536.3344
1500+
$530.8616
2000+
$525.3888
2500+
$519.916
Exquisite packaging
Discount
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Choose BLA6G1011L-200RG112 by NXP USA Inc. for exceptional quality in Discrete Semiconductor Products. These Transistors - Bipolar (BJT) - Single are designed for high performance, featuring excellent current handling and stability. Ideal for use in power management and signal amplification, BLA6G1011L-200RG112 is a versatile solution. Ready to order? Submit your inquiry today and let NXP USA Inc. provide the components you need.
Specifications
- Product Status: Active
- Transistor Type: -
- Current - Collector (Ic) (Max): -
- Voltage - Collector Emitter Breakdown (Max): -
- Vce Saturation (Max) @ Ib, Ic: -
- Current - Collector Cutoff (Max): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Power - Max: -
- Frequency - Transition: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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