BLD6G22L-50,112
NXP USA Inc.
NXP USA Inc.
RF TRANSISTOR
$85.05
Available to order
Reference Price (USD)
1+
$85.05000
500+
$84.1995
1000+
$83.349
1500+
$82.4985
2000+
$81.648
2500+
$80.7975
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
NXP USA Inc. presents the BLD6G22L-50,112 RF MOSFET series the ultimate solution for high-power RF amplification. With exceptional linearity and low intermodulation distortion, these FETs excel in broadcast equipment and military communications. Their rugged construction ensures longevity even in harsh conditions. Don t compromise on quality request a quote today and experience the difference!
Specifications
- Product Status: Obsolete
- Transistor Type: LDMOS (Dual), Common Source
- Frequency: 2.14GHz
- Gain: 14dB
- Voltage - Test: 28 V
- Current Rating (Amps): 10.2A
- Noise Figure: -
- Current - Test: 170 mA
- Power - Output: 8W
- Voltage - Rated: 65 V
- Package / Case: SOT-1130A
- Supplier Device Package: CDFM4
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