BLD6G22LS-50,112
NXP USA Inc.
NXP USA Inc.
RF TRANSISTOR
$90.08
Available to order
Reference Price (USD)
1+
$90.08000
500+
$89.1792
1000+
$88.2784
1500+
$87.3776
2000+
$86.4768
2500+
$85.576
Exquisite packaging
Discount
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The BLD6G22LS-50,112 by NXP USA Inc. redefines reliability in RF power transistors. Boasting high breakdown voltage and superior gain bandwidth, these MOSFETs are indispensable in medical imaging and industrial heating systems. Their design prioritizes energy efficiency without sacrificing power. Interested? Send us your requirements and we ll provide customized solutions!
Specifications
- Product Status: Obsolete
- Transistor Type: LDMOS (Dual), Common Source
- Frequency: 2.14GHz
- Gain: 14dB
- Voltage - Test: 28 V
- Current Rating (Amps): 10.2A
- Noise Figure: -
- Current - Test: 170 mA
- Power - Output: 8W
- Voltage - Rated: 65 V
- Package / Case: SOT-1130B
- Supplier Device Package: CDFM4
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