BLF10M6LS200U112
NXP USA Inc.
NXP USA Inc.
POWER LDMOS TRANSISTOR
$88.00
Available to order
Reference Price (USD)
1+
$88.00000
500+
$87.12
1000+
$86.24
1500+
$85.36
2000+
$84.48
2500+
$83.6
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your electronic projects with BLF10M6LS200U112 by NXP USA Inc., a top choice in Discrete Semiconductor Products. These Transistors - Bipolar (BJT) - Single offer superior performance with features like low noise and high gain, making them suitable for a wide range of applications. Whether you're working on consumer electronics or industrial systems, BLF10M6LS200U112 provides the reliability you need. Ready to enhance your designs? Submit an inquiry now and experience the NXP USA Inc. difference.
Specifications
- Product Status: Active
- Transistor Type: -
- Current - Collector (Ic) (Max): -
- Voltage - Collector Emitter Breakdown (Max): -
- Vce Saturation (Max) @ Ib, Ic: -
- Current - Collector Cutoff (Max): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Power - Max: -
- Frequency - Transition: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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