BLF6G10LS-135R,112
NXP USA Inc.
NXP USA Inc.
RF TRANSISTOR
$87.91
Available to order
Reference Price (USD)
1+
$87.91000
500+
$87.0309
1000+
$86.1518
1500+
$85.2727
2000+
$84.3936
2500+
$83.5145
Exquisite packaging
Discount
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The BLF6G10LS-135R,112 by NXP USA Inc. redefines reliability in RF power transistors. Boasting high breakdown voltage and superior gain bandwidth, these MOSFETs are indispensable in medical imaging and industrial heating systems. Their design prioritizes energy efficiency without sacrificing power. Interested? Send us your requirements and we ll provide customized solutions!
Specifications
- Product Status: Obsolete
- Transistor Type: LDMOS
- Frequency: 871.5MHz ~ 891.5MHz
- Gain: 21dB
- Voltage - Test: 28 V
- Current Rating (Amps): 32A
- Noise Figure: -
- Current - Test: 950 mA
- Power - Output: 26.5W
- Voltage - Rated: 65 V
- Package / Case: SOT-502B
- Supplier Device Package: SOT502B
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