BLF7G10L-250,112
NXP USA Inc.

NXP USA Inc.
RF PFET, 1-ELEMENT, ULTRA HIGH F
$102.56
Available to order
Reference Price (USD)
1+
$102.56000
500+
$101.5344
1000+
$100.5088
1500+
$99.4832
2000+
$98.4576
2500+
$97.432
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
For mission-critical RF amplification, choose NXP USA Inc.'s BLF7G10L-250,112 MOSFETs. Combining silicon carbide (SiC) robustness with precision matching networks, they outperform in avionics and marine navigation systems. Extended lifecycle ratings reduce total cost of ownership. Your perfect component awaits click inquire to connect with our technical specialists!
Specifications
- Product Status: Active
- Transistor Type: LDMOS
- Frequency: 920MHz ~ 960MHz
- Gain: 19.5dB
- Voltage - Test: 30 V
- Current Rating (Amps): -
- Noise Figure: -
- Current - Test: 1.8 A
- Power - Output: 60W
- Voltage - Rated: 65 V
- Package / Case: SOT-502A
- Supplier Device Package: LDMOST