BLF7G10LS-250,112
NXP USA Inc.
NXP USA Inc.
N-CHANNEL, MOSFET
$103.21
Available to order
Reference Price (USD)
60+
$106.38133
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your RF designs with NXP USA Inc.'s BLF7G10LS-250,112 MOSFETs, engineered for precision and efficiency. Key features include ultra-fast switching, minimal power loss, and robust ESD protection, perfect for high-frequency applications. From aerospace to IoT devices, these transistors deliver unmatched performance. Ready to optimize your circuit? Submit your inquiry now and our team will assist you promptly!
Specifications
- Product Status: Active
- Transistor Type: LDMOS
- Frequency: 869MHz ~ 960MHz
- Gain: 19.5dB
- Voltage - Test: 30 V
- Current Rating (Amps): 5µA
- Noise Figure: -
- Current - Test: 1.8 A
- Power - Output: 250W
- Voltage - Rated: 65 V
- Package / Case: SOT-502B
- Supplier Device Package: SOT502B
Related Products
MACOM Technology Solutions
MRF177
Freescale Semiconductor
MRF9135LR5
NXP USA Inc.
CLF1G0060S-10U
onsemi
JDX5004
Integra Technologies Inc.
IGN1214M300
Microwave Technology Inc.
MWT-PH31F
Ampleon USA Inc.
BLL8H1214L-250U
Ampleon USA Inc.
BLC9G20LS-240PVY
onsemi
2SK4087LS-MG5
NXP USA Inc.