BLF7G20LS-90P,112
NXP USA Inc.
NXP USA Inc.
RF PFET, 2-ELEMENT, L BAND, SILI
$68.11
Available to order
Reference Price (USD)
60+
$71.15767
Exquisite packaging
Discount
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Unlock next-gen RF performance with BLF7G20LS-90P,112 from NXP USA Inc.. These MOSFETs feature innovative gallium nitride (GaN) technology for higher efficiency in compact form factors, revolutionizing telecom infrastructure and defense electronics. Their lead-free compliance meets global environmental standards. Let s discuss your application needs contact our sales team now!
Specifications
- Product Status: Active
- Transistor Type: LDMOS (Dual), Common Source
- Frequency: 2.11GHz ~ 2.17GHz
- Gain: 19.5dB
- Voltage - Test: 28 V
- Current Rating (Amps): 2µA
- Noise Figure: -
- Current - Test: 550 mA
- Power - Output: 90W
- Voltage - Rated: 65 V
- Package / Case: SOT-1121B
- Supplier Device Package: LDMOST
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