BLF7G24L-160P,112
NXP USA Inc.
NXP USA Inc.
RF TRANSISTOR
$113.82
Available to order
Reference Price (USD)
1+
$113.82000
500+
$112.6818
1000+
$111.5436
1500+
$110.4054
2000+
$109.2672
2500+
$108.129
Exquisite packaging
Discount
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Discover high-performance BLF7G24L-160P,112 RF MOSFETs from NXP USA Inc., designed for superior signal amplification in demanding applications. These transistors feature low noise, high gain, and excellent thermal stability, making them ideal for RF and microwave circuits. Commonly used in communication systems, radar, and wireless infrastructure, our FETs ensure reliable performance in critical environments. Contact us today for pricing and technical support let s power your next project together!
Specifications
- Product Status: Obsolete
- Transistor Type: LDMOS (Dual), Common Source
- Frequency: 2.3GHz ~ 2.4GHz
- Gain: 18.5dB
- Voltage - Test: 28 V
- Current Rating (Amps): -
- Noise Figure: -
- Current - Test: 1.2 A
- Power - Output: 30W
- Voltage - Rated: 65 V
- Package / Case: SOT-539A
- Supplier Device Package: SOT539A
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