BLF8G10LS-160,112
NXP USA Inc.
NXP USA Inc.
RF PFET, 1-ELEMENT, ULTRA HIGH F
$63.17
Available to order
Reference Price (USD)
60+
$65.99833
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
NXP USA Inc. presents the BLF8G10LS-160,112 RF MOSFET series the ultimate solution for high-power RF amplification. With exceptional linearity and low intermodulation distortion, these FETs excel in broadcast equipment and military communications. Their rugged construction ensures longevity even in harsh conditions. Don t compromise on quality request a quote today and experience the difference!
Specifications
- Product Status: Active
- Transistor Type: LDMOS
- Frequency: 920MHz ~ 960MHz
- Gain: 19.7dB
- Voltage - Test: 30 V
- Current Rating (Amps): 5µA
- Noise Figure: -
- Current - Test: 1.1 A
- Power - Output: 35W
- Voltage - Rated: 65 V
- Package / Case: SOT-502B
- Supplier Device Package: SOT502B
Related Products
Ampleon USA Inc.
BLC8G20LS-400AVY
NXP USA Inc.
BLF7G22LS-250P,112
Ampleon USA Inc.
BLS9G3135LS-115U
Ampleon USA Inc.
BLU9H0408L-800PU
Wolfspeed, Inc.
CG2H80120D-GP4
Ampleon USA Inc.
BLF8G27LS-140,118
Ampleon USA Inc.
BLA9G1011L-300U
Microchip Technology
ARF463BG
Ampleon USA Inc.
BLP8G21S-160PVY
Ampleon USA Inc.