BLF8G10LS-270,112
NXP USA Inc.
NXP USA Inc.
RF PFET, 1-ELEMENT, ULTRA HIGH F
$75.82
Available to order
Reference Price (USD)
60+
$76.54650
Exquisite packaging
Discount
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The BLF8G10LS-270,112 by NXP USA Inc. redefines reliability in RF power transistors. Boasting high breakdown voltage and superior gain bandwidth, these MOSFETs are indispensable in medical imaging and industrial heating systems. Their design prioritizes energy efficiency without sacrificing power. Interested? Send us your requirements and we ll provide customized solutions!
Specifications
- Product Status: Active
- Transistor Type: LDMOS
- Frequency: 820MHz ~ 960MHz
- Gain: 18.5dB
- Voltage - Test: 28 V
- Current Rating (Amps): 4.2µA
- Noise Figure: -
- Current - Test: 2 A
- Power - Output: 270W
- Voltage - Rated: 65 V
- Package / Case: SOT-502B
- Supplier Device Package: SOT502B
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