BLF8G10LS-270V,112
NXP USA Inc.
NXP USA Inc.
RF PFET, 1-ELEMENT, ULTRA HIGH F
$84.57
Available to order
Reference Price (USD)
60+
$76.54650
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The BLF8G10LS-270V,112 by NXP USA Inc. redefines reliability in RF power transistors. Boasting high breakdown voltage and superior gain bandwidth, these MOSFETs are indispensable in medical imaging and industrial heating systems. Their design prioritizes energy efficiency without sacrificing power. Interested? Send us your requirements and we ll provide customized solutions!
Specifications
- Product Status: Active
- Transistor Type: LDMOS
- Frequency: 871.5MHz ~ 891.5MHz
- Gain: 19.5dB
- Voltage - Test: 28 V
- Current Rating (Amps): -
- Noise Figure: -
- Current - Test: 2 A
- Power - Output: 67W
- Voltage - Rated: 65 V
- Package / Case: SOT-1244B
- Supplier Device Package: CDFM6
Related Products
NXP USA Inc.
MRFX600HR5
Wolfspeed, Inc.
GTVA262711FA-V2-R0
Freescale Semiconductor
MRF8HP21130HR5
onsemi
CPH6316-TL-E
MACOM Technology Solutions
XF1001-SC-0G0T
NXP USA Inc.
MMRF1308HR5
Ampleon USA Inc.
BLM8D1822S-50PBY
Freescale Semiconductor
MRF8P23080HSR3
Infineon Technologies
BTS132E3129NKSA1
Wolfspeed, Inc.