BS2101F-E2
Rohm Semiconductor
Rohm Semiconductor
IC GATE DRV HI-SIDE/LO-SIDE 8SOP
$1.60
Available to order
Reference Price (USD)
2,500+
$0.33060
5,000+
$0.31920
Exquisite packaging
Discount
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Boost your circuit performance with Rohm Semiconductor's BS2101F-E2 Gate Drivers, designed for high-efficiency power management. These ICs feature adaptive dead-time control, integrated diagnostics, and wide operating temperatures, making them suitable for automotive, industrial, and consumer applications. Rohm Semiconductor ensures reliability and innovation in every component. Submit your inquiry now to learn more about our offerings.
Specifications
- Product Status: Not For New Designs
- Driven Configuration: High-Side or Low-Side
- Channel Type: Synchronous
- Number of Drivers: 2
- Gate Type: IGBT, N-Channel MOSFET
- Voltage - Supply: 10V ~ 18V
- Logic Voltage - VIL, VIH: 1V, 2.6V
- Current - Peak Output (Source, Sink): 60mA, 130mA
- Input Type: Non-Inverting
- High Side Voltage - Max (Bootstrap): 600 V
- Rise / Fall Time (Typ): 60ns, 20ns
- Operating Temperature: -40°C ~ 125°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.173", 4.40mm Width)
- Supplier Device Package: 8-SOP
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