BS2132F-E2
Rohm Semiconductor
Rohm Semiconductor
600V HIGH VOLTAGE 3 PHASE BRIDGE
$3.37
Available to order
Reference Price (USD)
1+
$3.37000
500+
$3.3363
1000+
$3.3026
1500+
$3.2689
2000+
$3.2352
2500+
$3.2015
Exquisite packaging
Discount
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Enhance your electronic designs with Rohm Semiconductor's BS2132F-E2 Gate Drivers, engineered for superior performance in demanding environments. These ICs boast features such as low EMI, high efficiency, and robust thermal management, making them ideal for automotive, aerospace, and medical devices. Rohm Semiconductor is committed to delivering innovative solutions that meet your exact requirements. Don't hesitate request a sample or quotation today!
Specifications
- Product Status: Obsolete
- Driven Configuration: High-Side
- Channel Type: 3-Phase
- Number of Drivers: 3
- Gate Type: IGBT, N-Channel MOSFET
- Voltage - Supply: 11.5V ~ 20V
- Logic Voltage - VIL, VIH: 0.8V, 2.6V
- Current - Peak Output (Source, Sink): -
- Input Type: Non-Inverting
- High Side Voltage - Max (Bootstrap): 600 V
- Rise / Fall Time (Typ): 125ns, 50ns
- Operating Temperature: -40°C ~ 125°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 28-SOIC (0.295", 7.50mm Width)
- Supplier Device Package: 28-SOP
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