BSC009NE2LSATMA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 25V 41A/100A TDSON
$2.36
Available to order
Reference Price (USD)
5,000+
$0.97200
10,000+
$0.95400
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover high-performance BSC009NE2LSATMA1 from Infineon Technologies, a leading solution in the Discrete Semiconductor Products category. Our Transistors - FETs, MOSFETs - Single are designed for efficiency and reliability, making them ideal for various electronic applications. These components feature low on-resistance, fast switching speeds, and excellent thermal performance, ensuring optimal functionality in power management and amplification circuits. Commonly used in automotive, industrial, and consumer electronics, BSC009NE2LSATMA1 delivers consistent performance under demanding conditions. Interested in learning more? Contact us today for a detailed quote and technical support!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 25 V
- Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 0.9mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 126 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 5800 pF @ 12 V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta), 96W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TDSON-8-7
- Package / Case: 8-PowerTDFN
Related Products
Infineon Technologies
IPN95R3K7P7ATMA1
Infineon Technologies
IPP65R099CFD7AAKSA1
Infineon Technologies
IRFH5015TRPBF
Fairchild Semiconductor
FDS3170N7
Rectron USA
RM2303
IXYS
IXFR180N06
onsemi
FQPF6N80C
onsemi
FDMA7670
Toshiba Semiconductor and Storage
TK8A65D(STA4,Q,M)
Toshiba Semiconductor and Storage