BSC025N08LS5ATMA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 80V 100A TDSON-8-7
$4.14
Available to order
Reference Price (USD)
1+
$4.14000
500+
$4.0986
1000+
$4.0572
1500+
$4.0158
2000+
$3.9744
2500+
$3.933
Exquisite packaging
Discount
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BSC025N08LS5ATMA1 by Infineon Technologies is a standout in the Discrete Semiconductor Products market, specifically for Transistors - FETs, MOSFETs - Single applications. Engineered for precision, this MOSFET offers exceptional gate control, low leakage current, and high power density. Ideal for use in audio amplifiers, DC-DC converters, and battery management systems, BSC025N08LS5ATMA1 ensures top-tier performance. Don t miss out on this versatile component request a sample or quote now!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 80 V
- Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 2.5mOhm @ 50A, 10V
- Vgs(th) (Max) @ Id: 2.3V @ 115µA
- Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 4.5 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 7500 pF @ 40 V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta), 156W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TDSON-8-7
- Package / Case: 8-PowerTDFN
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