BSC034N10LS5ATMA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 100V 19A/100A TDSON
$4.28
Available to order
Reference Price (USD)
1+
$4.28000
500+
$4.2372
1000+
$4.1944
1500+
$4.1516
2000+
$4.1088
2500+
$4.066
Exquisite packaging
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For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose BSC034N10LS5ATMA1 by Infineon Technologies. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with BSC034N10LS5ATMA1 inquire now for more details!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 3.4mOhm @ 50A, 10V
- Vgs(th) (Max) @ Id: 2.3V @ 115µA
- Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 4.5 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 50 V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta), 156W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TDSON-8-7
- Package / Case: 8-PowerTDFN
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