BSC0923NDIATMA1
Infineon Technologies
Infineon Technologies
MOSFET 2N-CH 30V 17A/32A TISON8
$1.71
Available to order
Reference Price (USD)
5,000+
$0.50474
Exquisite packaging
Discount
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Boost your project s performance with Infineon Technologies s BSC0923NDIATMA1, a standout in the Discrete Semiconductor Products category for Transistors - FETs, MOSFETs - Arrays. These components offer superior features such as high efficiency, low noise, and extended lifespan, making them suitable for a variety of advanced applications. From IoT devices to energy-efficient systems, BSC0923NDIATMA1 provides the reliability you need. Don t wait reach out to us today for more information and to request a sample of BSC0923NDIATMA1.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Dual) Asymmetrical
- FET Feature: Logic Level Gate, 4.5V Drive
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 17A, 32A
- Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 1160pF @ 15V
- Power - Max: 1W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-PowerTDFN
- Supplier Device Package: PG-TISON-8
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