BSC22DN20NS3GATMA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 200V 7A TDSON-8-5
$1.43
Available to order
Reference Price (USD)
5,000+
$0.41666
10,000+
$0.40100
25,000+
$0.39872
Exquisite packaging
Discount
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Upgrade your electronic designs with BSC22DN20NS3GATMA1 by Infineon Technologies, a top-tier choice in Discrete Semiconductor Products. Specifically crafted for Transistors - FETs, MOSFETs - Single applications, this product offers superior power handling and energy efficiency. Key features include high voltage tolerance, minimal power loss, and robust durability, making it perfect for switching and amplification tasks. Whether for industrial machinery, renewable energy systems, or portable devices, BSC22DN20NS3GATMA1 ensures reliable operation. Ready to integrate this component into your project? Submit an inquiry now for pricing and availability!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200 V
- Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 225mOhm @ 3.5A, 10V
- Vgs(th) (Max) @ Id: 4V @ 13µA
- Gate Charge (Qg) (Max) @ Vgs: 5.6 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 34W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TDSON-8-5
- Package / Case: 8-PowerTDFN
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