BSH203,215
Nexperia USA Inc.
Nexperia USA Inc.
MOSFET P-CH 30V 470MA TO236AB
$0.52
Available to order
Reference Price (USD)
3,000+
$0.10890
6,000+
$0.10230
15,000+
$0.09570
30,000+
$0.08778
75,000+
$0.08448
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose BSH203,215 by Nexperia USA Inc.. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with BSH203,215 inquire now for more details!
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 470mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Rds On (Max) @ Id, Vgs: 900mOhm @ 280mA, 4.5V
- Vgs(th) (Max) @ Id: 680mV @ 1mA (Typ)
- Gate Charge (Qg) (Max) @ Vgs: 2.2 nC @ 4.5 V
- Vgs (Max): ±8V
- Input Capacitance (Ciss) (Max) @ Vds: 110 pF @ 24 V
- FET Feature: -
- Power Dissipation (Max): 417mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-236AB
- Package / Case: TO-236-3, SC-59, SOT-23-3
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