BSH205G2AR
Nexperia USA Inc.
Nexperia USA Inc.
MOSFET P-CH 20V 2.6A TO236AB
$0.53
Available to order
Reference Price (USD)
1+
$0.53000
500+
$0.5247
1000+
$0.5194
1500+
$0.5141
2000+
$0.5088
2500+
$0.5035
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your electronic systems with BSH205G2AR, a high-quality Transistors - FETs, MOSFETs - Single from Nexperia USA Inc.. This Discrete Semiconductor Products component is built for reliability, featuring enhanced thermal stability and fast response times. Perfect for automotive electronics, power tools, and IoT devices, BSH205G2AR provides efficient power management solutions. Contact us today to discuss your requirements and place an order!
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): -
- Rds On (Max) @ Id, Vgs: 118mOhm @ 2.6A, 4.5V
- Vgs(th) (Max) @ Id: 900mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 4.5 V
- Vgs (Max): ±8V
- Input Capacitance (Ciss) (Max) @ Vds: 421 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 610mW (Ta), 10W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-236AB
- Package / Case: TO-236-3, SC-59, SOT-23-3
Related Products
onsemi
FDD8782
IXYS
IXTH50P10
Vishay Siliconix
SIDR668DP-T1-RE3
Panjit International Inc.
PJA3415A_R1_00001
onsemi
NVMFS4C302NT1G
Vishay Siliconix
SI2338DS-T1-BE3
Infineon Technologies
BSC0805LSATMA1
Vishay Siliconix
SIHB22N60AE-GE3
Vishay Siliconix
SQJ402EP-T1_GE3
onsemi