BSM150GB170DN2HOSA1
Infineon Technologies
Infineon Technologies
IGBT MOD 1700V 220A 1250W
$133.33
Available to order
Reference Price (USD)
1+
$133.33000
500+
$131.9967
1000+
$130.6634
1500+
$129.3301
2000+
$127.9968
2500+
$126.6635
Exquisite packaging
Discount
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The BSM150GB170DN2HOSA1 IGBT Module from Infineon Technologies delivers superior performance for demanding power control tasks. With features such as short-circuit protection and high-frequency operation, it's suited for solar inverters, industrial automation, and more. Trust Infineon Technologies for cutting-edge Discrete Semiconductor Products. Request a sample now!
Specifications
- Product Status: Obsolete
- IGBT Type: -
- Configuration: Half Bridge
- Voltage - Collector Emitter Breakdown (Max): 1700 V
- Current - Collector (Ic) (Max): 220 A
- Power - Max: 1250 W
- Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 150A
- Current - Collector Cutoff (Max): 1.5 mA
- Input Capacitance (Cies) @ Vce: 20 nF @ 25 V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: Module
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