BSM25GD120DN2BOSA1
Infineon Technologies
Infineon Technologies
IGBT MOD 1200V 35A 200W
$83.05
Available to order
Reference Price (USD)
10+
$87.21200
Exquisite packaging
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Infineon Technologies's BSM25GD120DN2BOSA1 IGBT Module is engineered for high-power applications requiring stability and longevity. Key features include integrated temperature monitoring and low EMI emissions, perfect for medical devices and traction systems. Choose quality contact us for technical specifications and lead times.
Specifications
- Product Status: Not For New Designs
- IGBT Type: -
- Configuration: Full Bridge
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 35 A
- Power - Max: 200 W
- Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 25A
- Current - Collector Cutoff (Max): 800 µA
- Input Capacitance (Cies) @ Vce: 1.65 nF @ 25 V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: Module
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