BSM75GAR120DN2HOSA1
Infineon Technologies
Infineon Technologies
IGBT MOD 1200V 30A 235W
$71.22
Available to order
Reference Price (USD)
10+
$74.79400
Exquisite packaging
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Infineon Technologies's BSM75GAR120DN2HOSA1 IGBT Module is engineered for high-power applications requiring stability and longevity. Key features include integrated temperature monitoring and low EMI emissions, perfect for medical devices and traction systems. Choose quality contact us for technical specifications and lead times.
Specifications
- Product Status: Obsolete
- IGBT Type: Trench Field Stop
- Configuration: Single
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 30 A
- Power - Max: 235 W
- Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 15A
- Current - Collector Cutoff (Max): 400 µA
- Input Capacitance (Cies) @ Vce: 1 nF @ 25 V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: Module
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