BSM75GB170DN2HOSA1
Infineon Technologies
Infineon Technologies
IGBT MOD 1700V 110A 625W
$93.33
Available to order
Reference Price (USD)
1+
$93.33000
500+
$92.3967
1000+
$91.4634
1500+
$90.5301
2000+
$89.5968
2500+
$88.6635
Exquisite packaging
Discount
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Infineon Technologies's BSM75GB170DN2HOSA1 IGBT Module offers exceptional reliability for critical applications like aerospace and defense. With features such as avalanche ruggedness and low VCE(sat), it ensures optimal performance. Trust Infineon Technologies for advanced Discrete Semiconductor Products. Ask about customization options!
Specifications
- Product Status: Obsolete
- IGBT Type: -
- Configuration: Half Bridge
- Voltage - Collector Emitter Breakdown (Max): 1700 V
- Current - Collector (Ic) (Max): 110 A
- Power - Max: 625 W
- Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 75A
- Current - Collector Cutoff (Max): -
- Input Capacitance (Cies) @ Vce: 11 nF @ 25 V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: Module
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