BSN20Q-7
Diodes Incorporated
Diodes Incorporated
MOSFET N-CH 50V 500MA SOT23
$0.46
Available to order
Reference Price (USD)
3,000+
$0.08856
6,000+
$0.08044
15,000+
$0.07232
30,000+
$0.06827
75,000+
$0.06136
150,000+
$0.05934
Exquisite packaging
Discount
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Boost your electronic applications with BSN20Q-7, a reliable Transistors - FETs, MOSFETs - Single by Diodes Incorporated. As a leader in Discrete Semiconductor Products, we offer components with low gate charge, high breakdown voltage, and excellent switching performance. Whether for aerospace, robotics, or energy systems, BSN20Q-7 meets the highest standards. Contact our team today for expert advice and competitive pricing!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 50 V
- Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 1.8Ohm @ 220mA, 10V
- Vgs(th) (Max) @ Id: 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 0.8 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 600mW (Ta), 920mW (Tc)
- Operating Temperature: -
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23-3
- Package / Case: TO-236-3, SC-59, SOT-23-3
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