BSO080P03NS3GXUMA1
Infineon Technologies
Infineon Technologies
MOSFET P-CH 30V 12A 8DSO
$1.24
Available to order
Reference Price (USD)
2,500+
$0.42350
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your electronic systems with BSO080P03NS3GXUMA1, a high-quality Transistors - FETs, MOSFETs - Single from Infineon Technologies. This Discrete Semiconductor Products component is built for reliability, featuring enhanced thermal stability and fast response times. Perfect for automotive electronics, power tools, and IoT devices, BSO080P03NS3GXUMA1 provides efficient power management solutions. Contact us today to discuss your requirements and place an order!
Specifications
- Product Status: Last Time Buy
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Rds On (Max) @ Id, Vgs: 8mOhm @ 14.8A, 10V
- Vgs(th) (Max) @ Id: 3.1V @ 150µA
- Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
- Vgs (Max): ±25V
- Input Capacitance (Ciss) (Max) @ Vds: 6750 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 1.6W (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-DSO-8
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
Related Products
onsemi
NTMFS020N06CT1G
onsemi
SCH2825-TL-E
onsemi
5HP01C-TB-E
NXP USA Inc.
PMF250XN,115
Panjit International Inc.
PJQ4408P-AU_R2_000A1
onsemi
FDP2710
onsemi
2SJ583LS
STMicroelectronics
STB45NF06T4
IXYS
IXFR200N10P
IXYS