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BSO330N02KG

Infineon Technologies
BSO330N02KG Preview
Infineon Technologies
N-CHANNEL POWER MOSFET
$0.23
Available to order
Reference Price (USD)
1+
$0.23000
500+
$0.2277
1000+
$0.2254
1500+
$0.2231
2000+
$0.2208
2500+
$0.2185
Exquisite packaging
Discount
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Specifications

  • Product Status: Active
  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 5.4A
  • Rds On (Max) @ Id, Vgs: 30mOhm @ 6.5A, 4.5V
  • Vgs(th) (Max) @ Id: 1.2V @ 20µA
  • Gate Charge (Qg) (Max) @ Vgs: 4.9nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 730pF @ 10V
  • Power - Max: 1.4W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: PG-DSO-8

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