BSO612CVGHUMA1
Infineon Technologies
Infineon Technologies
MOSFET N/P-CH 60V 2A 8-SOIC
$0.00
Available to order
Reference Price (USD)
2,500+
$0.44506
Exquisite packaging
Discount
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The BSO612CVGHUMA1 from Infineon Technologies is a top choice in the Discrete Semiconductor Products category, particularly for Transistors - FETs, MOSFETs - Arrays. With features like high breakdown voltage, low gate drive, and excellent thermal performance, these components are ideal for power electronics and high-frequency applications. Whether for consumer electronics or industrial machinery, BSO612CVGHUMA1 delivers consistent quality. Contact us now to learn more and secure your supply of Infineon Technologies s premium semiconductors.
Specifications
- Product Status: Obsolete
- FET Type: N and P-Channel
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 3A, 2A
- Rds On (Max) @ Id, Vgs: 120mOhm @ 3A, 10V
- Vgs(th) (Max) @ Id: 4V @ 20µA
- Gate Charge (Qg) (Max) @ Vgs: 15.5nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 340pF @ 25V
- Power - Max: 2W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: PG-DSO-8
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