BSO615NGHUMA1
Infineon Technologies
Infineon Technologies
MOSFET 2N-CH 60V 2.6A 8SOIC
$0.00
Available to order
Reference Price (USD)
2,500+
$0.44583
5,000+
$0.42354
12,500+
$0.40762
Exquisite packaging
Discount
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Optimize your electronic circuits with Infineon Technologies s BSO615NGHUMA1, a key player in the Discrete Semiconductor Products category for Transistors - FETs, MOSFETs - Arrays. These components are celebrated for their high efficiency, compact design, and long-lasting performance. Key features include fast switching, low threshold voltage, and superior thermal conductivity. Ideal for applications in power converters, RF amplifiers, and battery management systems. Reach out to us today to explore how BSO615NGHUMA1 can elevate your design and operational efficiency.
Specifications
- Product Status: Obsolete
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 2.6A
- Rds On (Max) @ Id, Vgs: 150mOhm @ 2.6A, 4.5V
- Vgs(th) (Max) @ Id: 2V @ 20µA
- Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 380pF @ 25V
- Power - Max: 2W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: PG-DSO-8
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