BSP149L6906HTSA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 200V 660MA SOT223-4
$0.67
Available to order
Reference Price (USD)
1+
$0.67000
500+
$0.6633
1000+
$0.6566
1500+
$0.6499
2000+
$0.6432
2500+
$0.6365
Exquisite packaging
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Upgrade your electronic designs with BSP149L6906HTSA1 by Infineon Technologies, a top-tier choice in Discrete Semiconductor Products. Specifically crafted for Transistors - FETs, MOSFETs - Single applications, this product offers superior power handling and energy efficiency. Key features include high voltage tolerance, minimal power loss, and robust durability, making it perfect for switching and amplification tasks. Whether for industrial machinery, renewable energy systems, or portable devices, BSP149L6906HTSA1 ensures reliable operation. Ready to integrate this component into your project? Submit an inquiry now for pricing and availability!
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200 V
- Current - Continuous Drain (Id) @ 25°C: 660mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 0V, 10V
- Rds On (Max) @ Id, Vgs: 1.8Ohm @ 660mA, 10V
- Vgs(th) (Max) @ Id: 1V @ 400µA
- Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 5 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 25 V
- FET Feature: Depletion Mode
- Power Dissipation (Max): 1.8W (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-SOT223-4-21
- Package / Case: TO-261-4, TO-261AA
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