BSP50H6327XTSA1
Infineon Technologies
Infineon Technologies
TRANS NPN DARL 45V 1A SOT223-4
$0.29
Available to order
Reference Price (USD)
1+
$0.29300
500+
$0.29007
1000+
$0.28714
1500+
$0.28421
2000+
$0.28128
2500+
$0.27835
Exquisite packaging
Discount
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Optimize your designs with BSP50H6327XTSA1 by Infineon Technologies, a leader in Discrete Semiconductor Products. These Transistors - Bipolar (BJT) - Single are designed for precision and reliability, offering excellent linearity and low distortion. Whether for RF applications or general-purpose switching, BSP50H6327XTSA1 is the perfect fit. Contact us today to learn more and place your order with Infineon Technologies.
Specifications
- Product Status: Not For New Designs
- Transistor Type: NPN - Darlington
- Current - Collector (Ic) (Max): 1 A
- Voltage - Collector Emitter Breakdown (Max): 45 V
- Vce Saturation (Max) @ Ib, Ic: 1.8V @ 1mA, 1A
- Current - Collector Cutoff (Max): 10µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 500mA, 10V
- Power - Max: 1.5 W
- Frequency - Transition: 200MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-261-4, TO-261AA
- Supplier Device Package: PG-SOT223-4
