BSR58,215
NXP USA Inc.
NXP USA Inc.
JFET N-CH 40V 250MW SOT23
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The BSR58,215 from NXP USA Inc. sets new standards in JFET reproducibility, with batch-to-batch VGS(off) variations under 2% for automated production lines. These transistors feature laser-trimmed geometries ensuring identical transfer characteristics in matched pairs for differential amplifiers. Industrial automation and process control systems benefit from this exceptional consistency. Join our preferred partner program for dedicated technical support and early access to new JFET developments.
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Voltage - Breakdown (V(BR)GSS): 40 V
- Drain to Source Voltage (Vdss): 40 V
- Current - Drain (Idss) @ Vds (Vgs=0): 8 mA @ 15 V
- Current Drain (Id) - Max: -
- Voltage - Cutoff (VGS off) @ Id: 800 mV @ 0.5 nA
- Input Capacitance (Ciss) (Max) @ Vds: -
- Resistance - RDS(On): 60 Ohms
- Power - Max: 250 mW
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23 (TO-236AB)
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